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Abstract—a distributed border trap model based on tunneling between the semiconductor surface and trap states in the gate dielectric film is formulated to account for the observed frequency dispersion in the capacitance and conductance of al2o3/ingaas mos devices biased in accumulation T is the time step τ is the effective trapping time to activate the charge carrier trapping, the parameters can be specified in the genericpropagation section in the configuration file: The distributed circuit model is more physical and descriptive than previous lumped circuit border trap.
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The dipole model is the basis for a comprehensive model of oxide charge trapping (of both polarities), applicable to many oxide reliability problems Implemented a trapping model into the genericpropagation module used an empirical trapping model by kramberger q(t) = q(t = 0) exp[−t/τ ] q Although the model grew out of radiation effects studies, it is now of interest to a much wider community, for this reason.
